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MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET
e. tion. cifica t to chang c al spe t a fins are subje is no limit is e: Th tric Notice parame Som
P
MIN RELI
ARY
FS3KMA-5A FS3KMA-5A
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE
FS3KMA-5A
OUTLINE DRAWING
10 0.3
Dimensions in mm
2.8 0.2
15 0.3
f 3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15
6.5 0.3
3 0.3
0.75 0.15
2.54 0.25
2.54 0.25

2.6 0.2
q 10V DRIVE q VDSS ............................................................................... 250V q rDS (ON) (MAX) ................................................................ 2.0 q ID ........................................................................................... 3A
GATE DRAIN SOURCE
TO-220FN
APPLICATION SMPS, High speed switching use
MAXIMUM RATINGS (Tc = 25C)
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso -- Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value L = 200H VGS = 0V VDS = 0V Conditions Ratings 250 20 3 9 3 25 -55 ~ +150 -55 ~ +150 2000 2.0 Unit V V A A A W C C V g
Jan. 2000
4.5 0.2
MITSUBISHI Nch POWER MOSFET
IMIN PREL
. ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som
ARY
FS3KMA-5A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25C)
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance IS = 1.5A, VGS = 0V Channel to case VDD = 150V, ID = 1.5A, VGS = 10V, RGEN = RGS = 50 ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 1.5A, VGS = 10V ID = 1.5A, VGS = 10V ID = 1.5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Test conditions Limits Min. 250 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 3.0 1.5 2.25 2.5 300 35 8 15 10 45 20 1.5 -- Max. -- 0.1 1 4.0 2.0 3.0 -- -- -- -- -- -- -- -- 2.0 5.0 Unit V A mA V V S pF pF pF ns ns ns ns V C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA
7 5 3 2
40
101
30
7 5 3 2
tw = 10s 100s 1ms TC = 25C Single Pulse 23 5 7 101 23 5 7 102 10ms DC 23 5
20
100
7 5 3 2
10
0
10-1 0 50 100 150 200
7
CASE TEMPERATURE TC (C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 5
VGS = 20V TC = 25C Pulse Test
OUTPUT CHARACTERISTICS (TYPICAL) 2.0
VGS = 20V 10V 6V 5V 8V TC = 25C Pulse Test
DRAIN CURRENT ID (A)
4
DRAIN CURRENT ID (A)
10V
1.6
3
8V 6V 5V PD = 25W
1.2
2
0.8
1
4V
0.4
4V
0
0
4
8
12
16
20
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Jan. 2000
MITSUBISHI Nch POWER MOSFET
e. tion. cifica t to chang c al spe t a fins are subje is no limit is e: Th tric Notice parame Som
P
MIN RELI
ARY
FS3KMA-5A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 5.0
TC = 25C Pulse Test
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20
TC = 25C Pulse Test
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
16
ID = 6A
4.0
12
3.0
8
3A 1A
2.0
VGS = 10V
4
1.0
20V
0
0
4
8
12
16
20
0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 10 102
7 5 3 2
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
8
101
7 5 3 2 25C
6
4
100
7 5 3 2
TC = 125C 75C
2
0
TC = 25C VDS = 10V Pulse Test
0
4
8
12
16
20
10-1
VDS = 10V Pulse Test 2 3 5 7 100 2 3 5 7 101
10-1
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 103
7 5 3 2 Ciss 5 3
SWITCHING CHARACTERISTICS (TYPICAL)
TCh = 25C VDD = 150V VGS = 10V RGEN = RGS = 50
102
7 5 3 2 Coss
SWITCHING TIME (ns)
2
CAPACITANCE Ciss, Coss, Crss (pF)
102
7 5 3 2 td(on) tf td(off)
101
7 5 3 2 TCh = 25C f = 1MHZ VGS = 0V 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Crss
100
101 7 5
tr 2 3 5 7 100 2 3 5 7 101
10-1
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Jan. 2000
MITSUBISHI Nch POWER MOSFET
IMIN PREL
. ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som
ARY
FS3KMA-5A
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 5.0
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
20
TCh = 25C ID = 3A
SOURCE CURRENT IS (A)
16
VDS = 50V
4.0
12
100V 200V
3.0
TC = 25C 75C 125C
8
2.0
4
1.0
0
0
2
4
6
8
10
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101
VGS = 10V 7 ID = 1/2ID 5 Pulse Test 3 2
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
0 50 100 150
4.0
3.0
100
7 5 3 2
2.0
1.0
10-1
-50
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102
7 5 3 2
1.2
101
7 D = 1.0 5 3 0.5 2 0.2
0.1
1.0
0.05
0.8
100
7 5 3 2 0.01 0.02 Single Pulse
PDM
tw T D= tw T
0.6
0.4
-50
0
50
100
150
10-1 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s)
Jan. 2000
CHANNEL TEMPERATURE Tch (C)

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